IGBT 1600v 30A H30R1602 kit com 2 unidades alta tensão
R$59,95
IGBT 1600 Volts 30 Amperes com diodo de alta velocidade incorporado
gate aceita +- 20v
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers : – very tight parameter distribution – high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
Applications:
• Inductive Cooking
• Soft Switching Applications Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IHW30N160R2 1600V 30A 1.8V 175°C H30R1602 PG-TO-247-3
IGBT thermal resistance, junction – case RthJC 0.48 K/W
Diode thermal resistance, junction – case RthJCD 0.48 K/W
Thermal resistance, junction – ambient RthJA 40 K/W
Input capacitance Ciss – 2740 pf
Output capacitance Coss – 68.1 pf
Reverse transfer capacitance Crss V C E=25V, VG E=0V, f=1MHz – 58.7 pf
Turn-off delay time t d(off) – 525ns
8 em estoque
IGBT 1600 Volts 30 Amperes com diodo de alta velocidade incorporado
gate aceita +- 20v
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
Applications:
• Inductive Cooking
• Soft Switching Applications Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IHW30N160R2 1600V 30A 1.8V 175°C H30R1602 PG-TO-247-3
IGBT thermal resistance, junction – case RthJC 0.48 K/W
Diode thermal resistance, junction – case RthJCD 0.48 K/W
Thermal resistance, junction – ambient RthJA 40 K/W
Input capacitance Ciss - 2740 pf
Output capacitance Coss - 68.1 pf
Reverse transfer capacitance Crss V C E=25V, VG E=0V, f=1MHz - 58.7 pf
Turn-off delay time t d(off) - 525ns
Informação adicional
Peso | 0,200 kg |
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Dimensões | 10 × 10 × 10 cm |